inchange semiconductor isc rf product specification isc silicon npn rf transistor 2SC2757 description low noise high current-gain bandwidth product applications designed for use in vhf rf amplifier, local oscillator, mixer. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 30 v v ceo collector-emitter voltage 15 v v ebo emitter-base voltage 5 v i c collector current-continuous 50 ma p c collector power dissipation @t c =25 0.15 w t j junction temperature 125 t stg storage temperature range -55~125 isc website www.iscsemi.cn
inchange semiconductor isc rf product specification isc silicon npn rf transistor 2SC2757 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce( sat ) collector-emitter saturation voltage i c = 10ma ; i b = 1ma 0.5 v i cbo collector cutoff current v cb = 12v; i e = 0 0.1 a h fe dc current gain i c = 5ma ; v ce = 10v 60 240 f t current-gain?bandwidth product i c = 5ma ; v ce = 10v 800 1100 mhz c ob output capacitance i e = 0 ; v cb = 10v;f= 1.0mhz 1.5 pf r bb? ? cc base time constant i c = 5ma ; v cb = 10v;f= 31.9mhz 10 15 ps ? h fe classifications marking t32 t33 t34 h fe 60-120 90-180 120-240 isc website www.iscsemi.cn 2
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